2SC4173

SMD S MD Type NPN Silicon Epitaxia 2SC4173 Transistors IC Features High gain bandwidth product: fT=200MHz min. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 60 40 5 500 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Turn-off time *. PW 350ìs,duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = 40V, IE=0 VEB = 4V, IC=0 VCE = 1V , IC = 150mA 75 150 0.25 1.0 200 400 3.5 30 150 180 8.0 Min Typ Max 100 100 300 0.75 1.2 V V MHz pF ns ns ns Unit nA nA VCE(sat) IC = 500mA , IB = 50mA VBE(sat) IC = 500mA , IB = 50mA fT Cob ton tstg toff VCE = 10V , IE = -20mA VCB = 10V , IE = 0 , f = 1.0MHz VCC = 30V , IC = 150mA , IB1 = -IB2 = 15mA hFE Classification Marking hFE B12 75 150 B13 100 200 B14 150 300 www.kexin.com.cn 1