2SC4177

SMD S MD Type NPN Silicon Epitaxia 2SC4177 Features High dc current gain High voltage. Transistors IC 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 60 50 5 100 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Base emitter voltage * Gain bandwidth product Output capacitance *. PW 350ìs,duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = 60V, IE=0 VEB = 5V, IC = 0 VCE = 6V , IC = 1.0mA 90 200 0.15 0.86 0.55 0.62 250 3.0 Min Typ Max 0.1 0.1 600 0.3 1.0 0.65 V V V MHz pF Unit ìA ìA VCE(sat) IC = 100mA, IB = 10mA VBE(sat) IC = 100mA, IB = 10mA VBE fT Cob VCE = 6V, IC = 1.0mA VCE = 6V, IE = -10mA VCE = 6V, IE = 0, f = 1MHz hFE Classification Marking hFE L4 90 180 L5 135 270 L6 200 400 L7 300 600 www.kexin.com.cn 1