2SC4179

SMD S MD Type NPN Silicon Epitaxia 2SC4179 Transistors IC Features High gain bandwidth product. Low output capacitance. Low noise figure. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 50 30 5 50 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Base-emitter voltage * Collector-emitter saturation voltage * Gain bandwidth product Output capacitance Collector to base time constant Noise figure *. PW 350ìs,duty cycle 2% Symbol ICBO IEBO hFE VBE Testconditons VCB = 50V, IE=0 VEB = 5V, IC = 0 VCE = 6V , IC = 1.0mA VCE = 6V , IC = 1.0mA 60 0.65 100 0.70 0.08 150 250 1.9 10 2 2.2 15 4 Min Typ Max 0.1 0.1 180 0.75 0.3 V V MHz pF ps dB Unit ìA ìA VCE(sat) IC = 10mA, IB = 1.0mA fT Cob VCE = 6V, IE = -1.0mA VCE = 6V, IE = 0, f = 1MHz Cc'rb'b VCB = 6V , IE = -10mA , f = 31.9MHz NF VCE = 6V , IE = -1.0mA , Rg = 500Ù, f = 1.0MHz hFE Classification Marking hFE FA3 60 120 FA4 90 180 www.kexin.com.cn 1