2SC4180

S MD Type NPN Silicon Epitaxial Transistor 2SC4180 Features Small dimension High DC current gain Transistors 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 120 120 5 50 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage * Base-emitter voltage * Gain bandwidth product Output capacitance * Pulse test: tp 350 ìs; d 0.02. Symbol ICBO IEBO hFE Testconditons VCB = 120V, IE=0 VEB = 5V, IC=0 VCE = 6V , IC = 1mA* VCE = 6V , IC = 0.1mA VCE(sat) IC = 10mA , IB = 1mA VBE fT Cob VCE =6V , IC = 1mA VCE = 6V , IE = -1mA VCB = 30V , IE = 0 , f = 1.0MHz 0.55 50 135 100 600 580 0.07 0.59 110 1.6 2.5 0.3 0.65 V V MHz pF Min Typ Max 0.05 0.05 900 Unit ìA ìA hFE Classification Marking hFE D15 135 270 D16 200 400 D17 300 600 D18 450 900 www.kexin.com.cn 1