2SC4181A

SMD S MD Type NPN Silicon Epitaxia 2SC4181A Transistors IC Features High DC current gain:Hfe=1000 to 3200 Low VCE(sat): VCE(sat)=0.07v TYP High VEBO: VEBO=15V 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 60 50 15 150 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Base-emitter voltage * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Turn-off time *. PW 350ìs,duty cycle 2% Symbol ICBO IEBO hFE VBE Testconditons VCB = 50V, IE=0 VEB = 10V, IC=0 VCE = 5.0V , IC = 1.0mA VCE = 5.0V , IC = 1.0mA 1000 1800 0.56 0.07 0.8 250 3.0 0.13 0.72 1.22 0.3 1.2 Min Typ Max 100 100 3200 V V V MHz pF ns ns ns Unit nA nA VCE(sat) IC = 50mA , IB = 5.0mA VBE(sat) IC = 50mA , IB = 5.0mA fT Cob ton tstg toff VCE = 5.0V , IE = -10mA VCB = 5.0V , IE = 0, f = 1.0MHz VCC = 10V, VBE(off) = -2.7V IC = 150mA , IB1 = -IB2 = 15mA hFE Classification Marking hFE L15 1000 2000 L16 1600 3200 www.kexin.com.cn 1