2SC4253

SMD S MD Type Silicon NPN Epitaxial 2SC4253 Transistors IC Features Good linearity of fT. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 25 4 50 25 100 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Collector-base time constant Transition frequency Symbol ICBO IEBO Testconditons VCB = 30 V, IE = 0 VEB = 3 V, IC = 0 25 20 70 200 0.2 1.5 1.1 1.6 25 250 600 V V pF ps MHz Min Typ Max 0.1 0.1 Unit ìA ìA V V(BR)CEO IC = 1 mA, IB = 0 hFE VCE = 10 V, IC = 10 mA VCE(sat) IC = 15 mA, IB = 1.5mA VBE(sat) IC = 15 mA, IB = 1.5mA Cob Cc.rbb' fT VCB = 10 V, IE = 0, f = 1MHz VCB = 10 V, IC = 1mA, f = 30MHz VCE = 10 V, IC = 10 mA Marking Marking HH www.kexin.com.cn 1