2SC4390

S MD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SC4390 Features Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Large current capacity (IC=2A). Low collector-to-emitter saturation voltage (VCE(sat) 0.3V). 15V). High VEBO (VEBO Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 20 10 15 2 4 0.4 500 150 -55 to +150 Unit V V V A A A mW www.kexin.com.cn 1 SMD Type 2SC4390 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 15V, IE=0 VEB = 10V, IC=0 VCE =2V , IC = 500mA VCE = 10V , IC = 50mA VCB = 10V , f = 1.0MHz Transistors Min Typ Max 0.1 0.1 Unit ìA ìA 800 1500 260 280 0.11 0.87 3200 MHz pF 0.5 1.2 V V V V V VCE(sat) IC = 1 A , IB = 20mA VBE(sat) IC = 1 A , IB = 20mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 ton 20 10 15 0.13 ìs Storage time tstg 0.8 ìs Fall time tf 0.1 ìs 2 www.kexin.com.cn