2SC4399

SMD S MD Type Transistors IC NPN Epitaxial Planar Silicon Transistor 2SC4399 Features High power gain : PG=25dB typ (f=100MHz). applied sets to be made small and slim. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 20 5 30 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Reverse transfer capacitance Base-collector time constant Power gain Noise figure Symbol ICBO IEBO hFE fT Cre rbb'Cc PG NF Testconditons VCB = 10V, IE=0 VEB = 4V, IC=0 VCE = 6V , IC = 1mA VCE = 6V , IC = 1mA VCB = 6V, f = 1MHz VCB = 6V, IC= 1mA, f = 31.9MHz VCB = 6V, IC= 1mA, f = 100MHz VCB = 6V, IC= 1mA, f = 100MHz 60 200 320 0.9 12 25 3.0 1.2 20 Min Typ Max 0.1 0.1 270 MHz pF ps dB dB Unit ìA ìA hFE Classification Marking Rank hFE 3 60 120 F 4 90 180 5 135 270 www.kexin.com.cn 1