2SC4409

S MD Type Power Switching Applications 2SC4409 Transistors Features Low Collector Saturation Voltage: VCE(sat) = 0.5V(max)(IC = 1A) High Speed Switching Time: tstg = 500ns(typ.) Small Flat Package PC = 1.0 to 2.0W (mounted on a ceramic substrate) Complementary to 2SA1681 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on a ceramic board (250 mm x 0.8 t) 2 Symbol VCBO VCEO VEBO IC IB PC PC * Tj Tstg Rating 80 50 6 2 0.2 0.5 1 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Emitter Breakdown Voltage Transition Frequency Collector Output Capacitance Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE VCE(sat) VBE(sat) Testconditons VCB = 80V , IE = 0 VEB = 6V , IC = 0 VCE = 2V , IC = 100mA VCE = 2V , IC = 1.5A IC = 1A , IB = 0.05A IC = 1A , IB = 0.05A 50 100 14 0.1 See Test Circuit 0.5 0.1 ìs 120 40 0.5 1.2 V V V MHz pF Min Typ Max 0.1 0.1 400 Unit ìA ìA V(BR)CEO IC = 10mA, IB = 0 fT Cob ton tstg tf VCE = 2V , IC = 100mA VCB = 10V , IE = 0, f = 1MHz www.kexin.com.cn 1 SMD Type 2SC4409 Test Circuit Transistors Marking Marking KA Electrical Characteristics Curves 2 www.kexin.com.cn SMD Type 2SC4409 Transistors www.kexin.com.cn 3