2SC4412

S MD Type Transistors NPN Triple Diffused Planar Silicon Transistor 2SC4412 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 High breakdown voltage. Small reverse transfer capacitance and excellent high frequency characteristic(Cre : 1.0pF typ). Excellent DC current gain ratio(hFE ratio : 0.95 typ). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 300 300 5 50 100 250 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output capacitance Reverse transfer capacitance DC current gain ratio Collector-emitter saturation voltage Base-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-base breakdown voltage Symbol IcBO IEBO hFE fT Cob Cre hFE ratio Testconditons VCB = 200V , IE = 0 VEB = 4V , IC = 0 VCE = 6V , IC = 0.1 mA VCE = 6V , IC =1 mA VCE = 30V , IC = 10 mA VCB = 30V , f = 1MHz VCB = 30V , f = 1MHz hFE1/ hFE2 Min Typ +0.1 0.38-0.1 0-0.1 Max 0.1 0.1 Unit ìA ìA 100 100 70 1.5 1.0 0.95 320 MHz pF pF VCE(sat) IC = 10mA , IB = 1mA VBE(sat) IC = 10mA , IB = 1mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 300 300 5 1.0 1.0 V V V V V hFE Classification Marking Rank hFE 4 100 200 QT 5 160 320 www.kexin.com.cn 1