2SC4413

SMD S MD Type Transistors IC NPN Epitaxial Planar Silicon Transistor 2SC4413 Features Adoption of FBET process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Small Cob. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Base current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 60 50 15 100 200 20 150 150 -55 to +150 Unit V V V mA mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-to-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 40V, IE=0 VEB = 10V, IC=0 VCE = 5V , IC = 10mA VCE = 10V , IC = 10mA VCB = 10V, f = 1MHz 800 1500 200 1.5 0.1 0.8 60 50 15 0.5 1.1 Min Typ Max 0.1 0.1 3200 MHz pF V V V V V Unit ìA ìA VCE(sat) IC = 50mA , IB = 1mA VBE(sat) IC = 50mA , IB = 1mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 Marking Marking GY www.kexin.com.cn 1