2SC4446

SMD S MD Type Transistors IC NPN Epitaxial Planar Silicon Transistor 2SC4446 Features Very small-sized package High VEBO. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Base current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 60 50 15 150 300 30 150 150 -55 to +150 Unit V V V mA mA mA mW www.kexin.com.cn 1 SMD Type 2SC4446 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Collector-to-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Output capacitance Turn-on time Symbol ICBO IEBO hFE fT Testconditons VCB = 40V, IE=0 VEB = 10V, IC=0 VCE = 6V , IC = 1mA VCE = 6V , IC = 1mA Transistors IC Min Typ Max 0.1 0.1 Unit ìA ìA 135 130 0.15 0.85 60 50 15 2.2 50 600 MHz 0.5 1.2 V V V V V pF ns VCE(sat) IC = 50mA , IB = 5mA VBE(sat) IC = 50mA , IB = 5mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 Cob ton VCB = 6V, f = 1MHz Storage time tstg 590 ns Fall time tf 110 ns hFE Classification Marking Rank hFE 5 135 270 H 6 200 400 7 300 600 2 www.kexin.com.cn