2SC4497

S MD Type Silicon NPN Triple Diffused Type 2SC4497 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 Low saturation voltage. Small collector output capacitance. +0.1 1.3-0.1 High voltage. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 300 300 6 100 20 200 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO Testconditons VCB = 300 V, IE = 0 VEB = 6 V, IC = 0 300 300 30 20 0.5 1.2 70 3 4 V V MHz pF 150 Min Typ Max 0.1 0.1 Unit ìA ìA V V V(BR)CBO IC = 0.1 mA, IE = 0 V(BR)CEO IC = 1 mA, IB = 0 hFE VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 1mA VCE (sat) IC = 20 mA, IB = 2 mA VBE (sat) IC = 20 mA, IB = 2 mA fT Cob VCE = 10 V, IC = 10 mA VCB = 20 V, IE = 0, f = 1 MHz hFE Classification Marking Rank hFE 3R R 30 90 3O O 50 150 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1