2SC4499S

S MD Type Silicon NPN Triple Diffused 2SC4499S TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features High speed and high voltage switching +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation TC=25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating 500 400 10 0.5 1 0.75 10 150 -55 to +150 Unit V V V A A W W Electrical Characteristics Ta = 25 Parameter Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current Symbol VCEO(sus) V(BR)EBO ICBO ICEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time * 1 Pulse test. hFE VCE(sat) VBE(sat) ton tstg tf Testconditons IC = 0.1 A, RBE = IE = 10 mA, IC = 0 VCB = 400 V, IE = 0 VCE = 350 V, RBE = VCE = 5 V, IC = 0.25 A*1 VCE = 5 V, IC = 0.5 A*1 IC = 0.25 A, IB = 0.05 A*1 IC = 0.25 A, IB = 0.05 A*1 IC = 0.5 A, IB1 = -IB2 = 0.1 A, VCC= 150 V 12 5 1.0 1.5 1.0 2 1.0 V V ìs ìs ìs ,L = 100 mH Min 400 10 20 50 Typ Max Unit V V ìA 3 .8 0 www.kexin.com.cn 1