2SC4505

S MD Type Transistors NPN Epitaxial Planar Silicon Transistors 2SC4505 Features High breakdown voltage. (BVCEO = 400V) Low saturation voltage, typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA. High switching speed, typically tf = 1.7ìs at Ic =100mA. Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current Symbol VCBO VCEO VEBO IC Rating 400 400 7 0.1 0.2 CollectorPower Dissipation Junotion Temperature storage Temperature *1 Single pulse pw=20ms,Duty=1/2 *2 When mounted on a 40X40X0.7 mm ceramic board. PC TJ Tstg 0.5 2 150 -55 to 150 Unit V V V A A *1 W *2 W www.kexin.com.cn 1 SMD Type 2SC4505 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Turn-on time Storage time Fall time Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob ton tstg tf IC=50ìA IC=1mA IE=50ìA VCB=400V VEB=6V IC/IB=10mA/1mA IC/IB=10mA/1mA VCE=10V , IC=10mA VCE=10V , IE=-10mA , f=10MHz VCB=10V , IE=0A , f=1MHz IC=-100mA RL=1.5kÙ IB1=-IB2=10mA VCC=-150V 82 Testconditons Transistors Min 400 400 7 Typ Max Unit V V V 10 10 0.05 0.5 1.5 270 20 7 1 5.5 1.7 ìA ìA V V MHz pF µs µs µs hFE Classification TYPE Rank Marking CEP P 82 to 180 CEQ Q 120 to 270 2 www.kexin.com.cn