2SC4519

SMD S MD Type Transistors IC NPN Epitaxial Planar Silicon Transistor 2SC4519 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 Adoption of FBET process. Low collector-to-emitter saturation voltage. Fast switching speed. Small-sized package. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Icp PC Tj Tstg Rating 60 45 5 500 1 200 150 -55 to +150 Unit V V V mA A mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type 2SC4519 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 45V, IE=0 VEB = 3V, IC=0 VCE = 2V , IC = 50mA VCE = 2V , IC = 50mA VCB = 10V , f = 1.0MHz 100 Min Transistors IC Typ Max 0.5 0.5 400 Unit ìA ìA 360 4 0.15 0.8 60 45 5 60 120 0.45 1.2 MHz pF V V V V V ns VCE(sat) IC = 200mA , IB = 10mA VBE(sat) IC = 200mV , IB = 10mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 ton Storage time tstg 150 270 ns Fall time tf 200 350 ns hFE Classification Marking Rank hFE 4 100 200 TT 5 140 280 6 200 400 2 www.kexin.com.cn