2SC4520

S MD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SC4520 Features Adoption of FBET, MBIT process. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. Small-sized package. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 45 5 1.5 3 1.3 150 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 SMD Type 2SC4520 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 45V, IE=0 VEB = 3V, IC=0 VCE = 2V , IC = 100mA VCE = 2V , IC = 100mA VCB = 10V , f = 1.0MHz 100 Min Transistors Typ Max 1 1 400 Unit ìA ìA 300 13 0.25 0.9 60 45 5 50 100 0.7 1.3 MHz pF V V V V V ns VCE(sat) IC = 800 mA , IB = 40mA VBE(sat) IC = 800 mV , IB = 40mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 ton Storage time tstg 150 270 ns Fall time tf 180 350 ns hFE Classification Marking Rank hFE R 100 200 CK S 140 280 T 200 400 2 www.kexin.com.cn