S MD Type
Transistors
NPN Epitaxial Planar Silicon Transistor 2SC4521
Features
Adoption of FBET, MBIT process. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. Small-sized package.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation,mounted on ceramic board(250mm2X0.8mm) Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 45 5 3 6 1.5 150 -55 to +150 Unit V V V A A W
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1
SMD Type
2SC4521
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 45V, IE=0 VEB = 2V, IC=0 VCE = 2V , IC = 500mA VCE = 2V , IC = 500mA VCB = 10V , f = 1.0MHz
Transistors
Min
Typ
Max 1 10
Unit ìA ìA
100 300 25 0.25 0.95 60 45 5 50
400 MHz pF 0.7 1.3 V V V V V 100 ns
VCE(sat) IC = 1.5 A , IB = 75 mA VBE(sat) IC = 1.5 V , IB = 75 mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 100ìA , IC = 0 ton
Storage time
tstg
150
270
ns
Fall time
tf
180
350
ns
hFE Classification
Marking Rank hFE R 100 200 CL S 140 280 T 200 400
2
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