2SC4522

S MD Type High-Speed Switching Applications 2SC4522 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Large current capacity. Low collector-to-emitter saturation voltage. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 Fast switching speed. 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation * Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 45 5 5 8 1 150 -55 to +150 Unit V V V A A W 3 .8 0 www.kexin.com.cn 1 SMD Type 2SC4522 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 45V, IE=0 VEB = 2V, IC=0 VCE =2V , IC = 500mA VCE =2V , IC = 5A VCE = 2V , IC = 500mA VCB = 10V , f = 1.0MHz Transistors Min Typ Max 1 10 Unit ìA ìA 100 40 300 40 0.25 0.95 60 45 5 50 400 MHz pF 0.7 1.3 V V V V V 100 ns VCE(sat) IC = 2.5A , IB = 125mA VBE(sat) IC = 2.5A , IB = 125mA V(BR)CBO IC = 100ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 100ìA , IC = 0 ton Storage time tstg 150 270 ns Fall time tf 180 350 ns hFE Classification Rank hFE R 100 200 S 140 280 T 200 400 2 www.kexin.com.cn