S MD Type
Silicon NPN Epitaxial Planar Type 2SC4543
Transistors
Features
High transition frequency fT Small collector output capacitance cob Wide current range.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * REB=1.2KÙ Symbol VCBO VCER * VCEO VEBO ICP IC PC Tj Tstg Rating 110 100 50 3.5 300 150 1.0 150 -55 to +150 Unit V V V V mA mA W
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance * REB=1.2KÙ Symbol ICEO VCBO VCER VCEO VEBO hFE Testconditons VCE = 35 V, IB = 0 IC = 100 ìA, IE = 0 IC = 500 ìA, RBE = 470Ù IC = 1 mA, IB = 0 IE = 100 ìA, IC = 0 VCE = 5 V, IC = 100 mA 110 100 50 3.5 20 0.5 300 350 3 Min Typ Max 10 Unit ìA V V V V ? V MHz MHz pF
VCE(sat) IC = 150 mA, IB = 15 mA fT1 fT2 Cob VCB = 10 V, IE = -10 mA, f = 200 MHz VCB = 10 V, IE = -110 mA, f = 200 MHz VCB = 30 V, IE = 0, f = 1 MHz
Marking
Marking 1F
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