2SC4548

S MD Type High-Voltage Driver Applications 2SC4548 Transistors Features High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity. Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm2 x 0.8 mm) Symbol VCBO VCEO VEBO IC ICP PC * Tj Tstg Rating 400 400 5 200 400 1.3 150 -55 to +150 Unit V V V mA mA W Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain-Bandwidth Product Collector Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol ICBO IEBO Testconditons VCB = 300V , IE = 0 VEB = 4V , IC = 0 400 400 5 60 200 0.8 1 70 5 4 0.25 5.0 V V MHz pF pF ìs Min Typ Max 0.1 0.1 Unit A A V V V V(BR)CBO IC = 10uA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10uA , IC = 0 hFE VCE = 10V , IC = 50mA VCE(sat) IC = 50mA , IB = 5mA VBE(sat) IC = 50mA , IB = 5mA fT Cob Cre ton toff VCE = 30V , IC = 10mA VCB = 30V , IE = 0 , f = 1MHz VCB = 30V , IE = 0 , f = 1MHz See Test Circuit. www.kexin.com.cn 1 SMD Type 2SC4548 Test Circuit Transistors hFE Classification Marking Rank hFE 60 D 120 100 CN E 200 Electrical Characteristics Curves 2 www.kexin.com.cn SMD Type 2SC4548 Transistors www.kexin.com.cn 3