2SC4555

SMD S MD Type Transistors IC NPN Epitaxial Planar Silicon Transistor 2SC4555 Features Very small-sized package Low collector-to-emitter saturation voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 20 15 5 500 1 150 105 -55 to +150 Unit V V V mA A mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-to-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) Testconditons VCB = 15V, IE=0 VEB = 4V, IC=0 VCE = 2V , IC = 10mA VCE = 2V , IC = 50mA VCB = 10V, f = 1MHz IC = 5mA , IB = 0.5mA IC = 200mA , IB = 10mA VBE(sat) IC = 200mA , IB = 10mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 20 15 5 160 0.95 135 300 4.0 30 300 1.2 V V V V Min Typ Max 0.1 0.1 600 MHz pF V Unit ìA ìA hFE Classification Marking Rank hFE 5 135 270 UT 6 200 400 7 300 600 www.kexin.com.cn 1 SMD Type Transistors IC 2 www.kexin.com.cn