SMD S MD Type
Transistors IC
Silicon NPN Epitaxial Planar Type
Features
High transition frequency fT. Small collector output capacitance cob.
2SC4562
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 50 5 50 150 150 -55 to +150 Unit V V V mA mW
Electrical Characteristics Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol VCBO VCEO VEBO ICBO IEBO hFE Testconditons IC = 10 ìA, IE = 0 IC = 1 mA, IB = 0 IE = 10 ìA, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IB = 0 VCE = 10 V, IC = 2 mA 200 0.06 250 1.5 Min 50 50 5 0.1 100 500 0.30 V MHz pF Typ Max Unit V V V ìA ìA
VCE(sat) IC = 10 mA, IB = 1 mA fT Cob VCB = 10 V, IE = -2 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz
hFE Classification
Marking Rank hFE Q 200 400 AM R 250 500
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