2SC4666

SMD S MD Type Silicon NPN Epitaxial 2SC4666 Transistors IC Features High hFE: hFE = 600 3600 High voltage: VCEO = 50 V High collector current: IC = 150 mA (max) Small package 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 150 30 100 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE Testconditons VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 VCE = 6 V, IC = 2 mA 600 0.12 100 250 3.5 0.5 0.3 Min Typ Max 0.1 0.1 3600 0.25 V MHz pF dB dB Unit ìA ìA VCE (sat) IC = 100 mA, IB = 10 mA fT Cob NF(1) VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 mA, f = 100 Hz,Rg = 10 kÙ VCE = 6 V, IC = 0.1 mA, f = 1 kHz,Rg = 10 kÙ Noise figure NF(2) hFE Classification Marking Rank hFE A 600 1800 P B 1200 3600 www.kexin.com.cn 1