2SC4667

SMD S MD Type Silicon NPN Epitaxial 2SC4667 Transistors IC Features High transition frequency: fT = 400 MHz (typ.) Low saturation voltage: VCE (sat) = 0.3 V (max) High speed switching time: tstg = 15 ns (typ.) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 40 15 5 200 40 100 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time Symbol ICBO IEBO hFE VCB = 40 V, IE = 0 VEB = 5 V, IC = 0 VCE = 1 V, IC = 10 mA 40 Testconditons Min Typ Max 0.1 0.1 240 0.3 1.0 200 400 4 70 15 30 6 V V MHz pF ns ns ns Unit ìA ìA VCE (sat) IC = 20 mA, IB = 1 mA VBE (sat) IC = 20 mA, IB = 1 mA fT Cob ton tstg tf VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz hFE Classification Marking Rank hFE R 40 80 CH O 70 140 Y 120 240 www.kexin.com.cn 1