2SC4694

SMD S MD Type Transistors IC NPN Epitaxial Planar Silicon Transistors 2SC4694 Features Adoption of MBIT process. High DC current gain. High VEBO (VEBO 25V). High reverse hFE (150 typ). Small ON resistance [Ron=1Ù (IB=5mA)]. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 50 20 25 500 800 100 150 150 -55 to +150 Unit V V V mA mA mA mW www.kexin.com.cn 1 SMD Type 2SC4694 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Common base output capacitance Collector-to-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Turn-on time Symbol IcBO IEBO hFE fT Cob Testconditons VCB = 40V , IE = 0 VEB = 20V , IC = 0 VCE = 5V , IC = 10mA VCE = 10V , IC = 10mA VCB = 10V , f = 1MHz Transistors IC Min Typ Max 0.1 0.1 Unit ìA ìA 300 250 3.6 0.12 0.85 50 20 25 135 1200 MHz pF 0.5 1.2 V V V V V ns VCE(sat) IC = 100mA , IB = 2mA VBE(sat) IC = 100mA , IB = 2mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 ton Storage time tstg 450 ns Fall time tf 100 ns Marking Marking WT 2 www.kexin.com.cn