2SC4702

S MD Type Silicon NPN Epitaxial 2SC4702 SOT-23 Transistors Unit: mm Features High breakdown voltage +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 Small Cob 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 VCEO = 300 V Cob = 1.5 pF Typ. 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 300 300 5 100 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Collector-emitter saturation voltage DC current gain Gain bandwidth product Collector output capacitance Symbol Testconditons Min 300 300 5 0.1 0.5 60 80 1.5 150 MHz pF Typ Max Unit V V V ìA V V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 ICBO VCB = 250V, IE=0 VCE(sat) IC = 30mA , IB = 3mA hFE fT Cob VCE = 6V , IC = 2mA VCE = 6V , IC = 5mA VCB = 10V , IE=0, f = 1MHz Marking Marking XV- +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1