2SC4755

SMD S MD Type Silicon NPN Epitaxial Planar Type 2SC4755 Transistors IC Features High-speed switching. Low collector to emitter saturation voltage VCE(sat). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 25 20 5 300 200 150 150 -55 to +150 Unit V V V mA mA mW www.kexin.com.cn 1 SMD Type 2SC4755 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE VCB = 10V, IE = 0 VEB = 4V, IC = 0 VCE = 1V, IC = 10mA Testconditons Transistors IC Min Typ Max 0.1 0.1 Unit ìA ìA 40 0.17 0.76 200 500 2 200 0.25 1.0 V V MHz 4 pF VCE(sat) IC = 10mA, IB = 1mA VBE(sat) IC = 10mA, IB = 1mA fT Cob VCB = 10V, IE = -10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz Turn-on time ton 17 ns Turn-off time toff 15 ns Storage time tstg 7 ns hFE Classification Marking Rank hFE P 40 80 DV Q 60 120 R 90 200 2 www.kexin.com.cn