2SC4852

SMD S MD Type Transistors IC NPN Epitaxial Planar Silicon Transistor 2SC4852 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 Small ON resistance. 0.55 Low collector-to-emitter saturation voltage. +0.1 1.3-0.1 Small output capacitance. 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 25 15 5 100 200 20 250 150 -55 to +150 Unit V V V mA mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage On resistance Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 15V, IE=0 VEB = 4V, IC=0 VCE = 2V , IC = 5mA VCE = 5V , IC = 10mA VCB = 10V , f = 1.0MHz 800 240 1.4 14 0.74 25 15 5 0.9 30 1.1 Min Typ Max 0.1 0.1 3200 MHz pF mV V V V V Ù Unit ìA ìA VCE(sat) IC = 10mA , IB = 1mA VBE(sat) IC = 10mV , IB = 1mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 Ron IB = 3mA, f = 1.0MHz Marking Marking YT +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1