2SC4983

SMD S MD Type Transistors IC NPN Epitaxial Planar Silicon Transistors 2SC4983 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Features AF power amplifier, medium-speed switching, small-sized motor drivers and LED drivers. Large current capacity. Low collector-to-emitter saturation voltage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 15 15 5 1 3 200 250 150 -55 to +150 Unit V V V A A mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Common base output capacitance Collector-to-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Symbol IcBO IEBO hFE fT Cob VCE(sat) Testconditons VCB = 12V , IE = 0 VEB = 4V , IC = 0 VCE = 2V , IC = 50mA VCE = 2V , IC = 50mA VCB = 10V , f = 1MHz IC = 5mA , IB = 0.5mA IC = 500mA , IB = 25mA VBE(sat) IC = 500mA , IB = 25mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 15 15 5 135 200 10 10 120 0.9 25 240 1.2 Min Typ Max 100 100 600 MHz pF mV mV V V V V Unit nA nA hFE Classification Marking Rank hFE 5 135 270 KN 6 200 400 7 300 600 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1