2SC5053

S MD Type Medium Power Transistor 2SC5053 Transistors Features Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA / 50mA. PC=2W (on 40×40×0.7mm ceramic board). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC IC (Pulse) *1 PC PC * Junction temperature Storage temperature *1. Single pulse, Pw=100ms, duty=1/2. *2. 40X40X0.7mm Ceramic board. Tj Tstg 2 Rating -60 -50 -5 -1 -2 0.5 2 150 -55 to +150 Unit V V V A A W W Collector power dissipation Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Forward current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=-50ìA IC=-1mA IE=-50ìA VCB=-40V VEB=-4V Testconditons Min -60 -50 -5 -0.1 -0.5 -0.4 120 150 20 270 MHz pF Typ Max Unit V V V ìA ìA V VCE(sat) IC=-500mA,IB=-50mA hFE fT Cob VCE=-3V,IC=-0.5A VCE=-5V, IE= 50mA, f=100MHz VCB=-10V, IE=0A, f=1MHz hFE Classification Marking Rank CG QR www.kexin.com.cn 1