2SC5069

S MD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SC5069 Features High current capacity. Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base Current Collector dissipation Junction temperature Storage temperature * Mounted on ceramic board(250mm X0.8mm). 2 Symbol VCBO VCEO VEBO IC ICP IB PC * Tj Tstg Rating 30 25 15 2 4 0.4 1.5 150 -55 to +150 Unit V V V A A A W www.kexin.com.cn 1 SMD Type 2SC5069 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-ON Time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 20 V, IE=0 VEB = 10 V, IC=0 VCE = 5 V , IC = 500 mA VCE = 5 V , IC = 1A VCE = 10 V , IC = 50 mA VCB = 10V , f = 1.0MHz Transistors Min Typ Max 100 100 Unit ìA ìA 800 600 1500 3200 260 27 0.15 0.85 30 25 15 0.14 0.5 1.2 MHz pF V V V V V ìs VCE(sat) IC = 1A , IB = 20 mA VBE(sat) IC = 1A , IB = 20 mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 ton Strange Time tstg 1.35 ìs Fall Time tf 0.1 ìs Marking Marking CU 2 www.kexin.com.cn