2SC5211

S MD Type Small Signal Transistor 2SC5211 Transistors Features High voltage VCEO=50V. Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Emitter-base voltage Collector-emitter voltage Peak collector current Collector current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VEBO VCEO ICM IC PC Tj Tstg Rating 55 4 50 600 400 500 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Colllector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Gain bandwidth product Symbol Testconditons Min 55 4 50 1 1 90 0.15 150 500 0.5 V MHz Typ Max Unit V V V ìA ìA V(BR)CBO IC=10ìA,IE=0 V(BR)EBO IE=10ìA,IC=0 V(BR)CEO IC=100ìA,RBE= ICBO IEBO hFE VCB=25V,IE=0 VEB=2V,IC=0 VCE=4V,IC=100mA VCE(sat) IC=200mA,IB=10mA fT VCE=6V,IE=-10mA hFE Classification Marking hFE TD 90 180 TE 150 300 TF 250 500 www.kexin.com.cn 1