2SC5232

SMD S MD Type Silicon NPN Epitaxial 2SC5232 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA Large collector current: IC = 500 mA (max). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 15 12 5 500 50 150 125 -55 to +125 Unit V V V mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type 2SC5232 Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Collector-emitter on resistance Turn-on time Symbol ICBO IEBO hFE VCE (sat) Testconditons VCB = 15 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 10 mA IC = 10 mA, IB = 0.5 mA IC = 200 mA, IB = 10 mA VBE (sat) IC = 200 mA, IB = 10 mA fT Cob Ron ton VCE = 2 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz IB = 1 mA, Vin = 1 Vrms, f = 1 kHz Transistors IC Min Typ Max 0.1 0.1 Unit ìA ìA 300 15 110 0.87 80 130 4.2 0.9 85 1000 30 250 1.2 V MHz pF Ù ns V Storage time tstg 170 ns Fall time tf Duty cycle 2%,IB1=-IB2=5 Ma 40 ns hFE Classification Marking Rank hFE A 300 600 F B 500 1000 2 www.kexin.com.cn