2SC5310

SMD S MD Type Transistors IC NPN Epitaxial Planar Silicon Transistors 2SC5310 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products. +0.1 0.38-0.1 +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation * Jumction temperature Storage temperature * Mounted on a glass-epoxy board (20×30×1.6mm) Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 30 25 6 1 3 200 250 150 -55 to +150 Unit V V V A A mA mW 0-0.1 www.kexin.com.cn 1 SMD Type 2SC5310 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on time Storage time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 20V, IE=0 VEB = 3V, IC=0 VCE =2V , IC = 100mA VCE = 10V , IC = 50mA VCB = 10V , f = 1.0MHz Transistors IC Min Typ Max 0.1 0.1 Unit ìA ìA 135 150 19 100 0.85 30 25 6 60 500 400 MHz pF 200 1.2 mV V V V V ns ns VCE(sat) IC = 500mA , IB = 25mA VBE(sat) IC = 500mA , IB = 25mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 ton tstg Fall time tf 25 ns hFE Classification Marking Rank hFE 5 135 270 NN 6 200 400 2 www.kexin.com.cn