2SC5344SF

SMD S MD Type PNP Silicon Transistor 2SC5344SF SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 +0.1 1.3-0.1 High hFE. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 35 30 5 800 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE Testconditons IC=100ìA , IE=0 IC=1mA , IB=0 IE=10ìA, IC=0 VCB=35V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA 100 Min 35 30 5 0.1 0.1 320 0.5 120 19 V MHz pF Typ Max Unit V V V ìA ìA VCE(sat) IC=500mA , IB=50mA fT Cob VCE=5V, IC=10mA, VCB=10V, IE=0, f=1MHz hFE Classification Marking Rank hFE O 100 200 FA Y 160 320 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1