2SC5457

S MD Type Transistors Silicon NPN triple diffusion planar type 2SC5457 TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.2 9.70 -0.2 +0.15 0.50 -0.15 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE +0.1 0.80-0.1 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25 Ta = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCES VCEO VEBO ICP IC IB PC Rating 500 500 400 7 6 3 1.2 30 1 150 -55 to +150 Unit V V V V A A A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol ICBO IEBO VCEO hFE VCE(sat) VBE(sat) fT ton tstg tf Testconditons VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 2V, IC = 1.2A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A VCE = 10V, IC = 0.2A, f = 1MHz IC = 1.5A, IB1 = 0.15A, IB2 =-0.3A, VCC = 200V 10 1.0 3.0 0.3 ìs 400 10 8 40 1 1.5 V MHz Min Typ Max 100 100 Unit ìA ìA V V 3 .8 0 High-speed switching www.kexin.com.cn 1