2SD1001

S MD Type NPN Silicon Epitaxial Transistor 2SD1001 Transistors Features World standard miniature package:SOT-89. High collector-emitter voltage. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector Current (pulse) * Total power dissipation Junction temperature Storage temperature * Pulse Test PW 10ms, Duty Cycle 50%. Symbol VCBO VCEO VEBO IC IC PT Tj Tstg Rating 80 80 5 300 500 2.0 150 -55 to +150 Unit V V V mA mA W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage * Base saturation voltage * Base-emitter voltage * Gain bandwidth product Output capacitance * Pulsed: PW 350 ìs, duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = 80 V, IE = 0 A VEB = 5.0 V, IC = 0 A VCE = 1.0 V, IC = 50 mA VCE = 2.0 V, IC = 300 mA VCE(sat) IC = 300 mA, IB = 30 mA VBE(sat) IC = 300 mA, IB = 30 mA VBE fT Cob VCE = 6.0 V, IC = 10 mA VCE = 6.0 V, IE = -10 mA VCB = 6 V, IE = 0, f = 1.0 MHz 600 90 30 200 80 0.15 0.86 645 140 70 0.6 1.2 700 V V mV MHz pF Min Typ Max 100 100 400 Unit nA nA hFE Classification Marking hFE EM 90 180 EL 135 270 EK 200 400 www.kexin.com.cn 1