2SD1006

S MD Type NPN Silicon Epitaxial Transistor 2SD1006 Transistors Features High collector to emitter voltage: VCEO 100V. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Collector l power dissipation Junction temperature Storage temperature *. PW 10ms,duty cycle 50% Symbol VCBO VCEO VEBO IC IC(pu) Pc Tj Tstg Rating 100 100 5 0.7 1.2 2 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Base-emitter voltage * Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Output capacitance Transition product *. PW 350ìs,duty cycle 2% Symbol VBE ICBO IEBO hFE Testconditons VCE =10V , IC = 10mA VCB = 100V, IE=0 VEB = 5V, IC=0 VCE =1V , IC = 5.0mA VCE =1V , IC = 100mA VCE(sat) IC = 500mA , IB = 50mA VBE(sat) IC = 500mA , IB = 50mA Cob fT VCB = 10V , IE = 0 , f = 1.0MHz VCE = 10V , IE = -10mA 45 90 200 200 0.3 0.9 10 90 400 0.6 1.5 V V pF MHz Min 550 Typ 620 Max 650 100 100 Unit mV nA nA hFE Classification Marking hFE HM 90 180 HL 135 270 HK 200 400 www.kexin.com.cn 1