2SD1033

S MD Type Silicon NPN Epitaxial Transistor 2SD1033 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features High Voltage VCEO=150V +0.2 9.70 -0.2 +0.15 0.50 -0.15 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current *1 Collector current Collector power dissipation Ta = 25 Junction temperature Storage temperature * PW 10ms,Duty Cycle 50% *2 Symbol VCBO VCEO VEBO ICP IC PT Tj Tstg Rating 200 150 5 3 2 2 150 -55 to +150 Unit V V V A A W *2 when mounted on ceramic substrate of 7.5cm2X0.7mm Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC Current Gain * Collector saturation voltage * Gain saturation Voltage * PW 350ìs,Duty cycle 2% Symbol ICBO IEBO hFE VCE(sat) fT Testconditons VCB = 150V, IE = 0 VEB = 4V, IC = 0 VCE=10V,IC=0.4A IC = 500mA, IB = 0.4A VCE=10V,IE=0.4A 40 100 0.2 10 Min Typ Max 50 50 200 1.0 V MHZ Unit ìA ìA hFE Classification Marking hFE M 40 to 80 L 60 to 120 K 100 to 200 3 .8 0 www.kexin.com.cn 1