2SD1048

SMD S MD Type Transistors IC NPN Epitaxial Planar Silicon Transistors 2SD1048 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Ultrasmall package allows miniaturization in end products. +0.1 2.4-0.1 Large current capacity (IC=0.7A) and low-saturation voltage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 20 15 5 0.7 1.5 200 125 -55 to +125 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Symbol IcBO IEBO hFE fT Cob Testconditons VCB = 15V , IE = 0 VEB = 4V , IC = 0 VCE = 2V , IC = 50mA VCE = 10V , IC = 50mA VCB = 10V , f = 1MHz 200 250 8 10 30 25 80 Min Typ Max 0.1 0.1 900 MHz pF mV mV Unit ìA ìA VCE(sat) IC = 5mA , IB = 0.5mA VCE(sat) IC = 100mA , IB = 10mA hFE Classification Marking hFE X6 200 400 X7 300 600 X8 450 900 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1