2SD1220

S MD Type Silicon NPN Epitaxial Transistor 2SD1220 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features Power Amplifier Applications +0.2 9.70 -0.2 +0.15 0.50 -0.15 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25 Tc = 25 Junction temperature Storage temperature range Tj Tstg Symbol VCBO VCEO VEBO IC IB PC Rating 150 150 6 1.5 1 1 10 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V (BR) CEO hFE VCE (sat) VBE fT Cob Testconditons VCB = 150 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 200 mA IC = 500 mA, IB = 50 mA VCE = 5 V, IC = 5 mA VCE = 5 V, IC = 200 mA VCB = 10 V, IE = 0, f = 1 MHz 0.5 20 100 13 20 150 60 320 1.5 0.8 V V MHz pF Min Typ Max 1.0 1.0 Unit ìA ìA V hFE Classification Marking Rank hFE R 60 to 120 D1220 O 100 to 200 Y 160 to 320 3 .8 0 www.kexin.com.cn 1