2SD1253

S MD Type Transistors Silicon NPN Triple Diffusion Planar Type 2SD1253,2SD1253A TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features High forward current transfer ratio hFE which has satisfactory linearity. +0.2 9.70 -0.2 Low collector to emitter saturation voltage VCE(sat). +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage 2SD1253 2SD1253A Collector-emitter voltage 2SD1253 2SD1253A Emitter-base voltage Collector current Peak collector current Collector power dissipation Ta = 25 Tc = 25 Junction temperature Storage temperature Tj Tstg VEBO IC ICP PC VCEO Symbol VCBO Rating 60 80 60 80 5 4 8 1.3 40 150 -55 to +150 Unit V V V V V A A W 3 .8 0 www.kexin.com.cn 1 SMD Type 2SD1253,2SD1253A Electrical Characteristics Ta = 25 Parameter Collector-emitter voltage 2SD1253 2SD1253A Base-emitter voltage Collector-emitter cutoff current 2SD1253 2SD1253A Collector-emitter cutoff current 2SD1253 2SD1253A Emitter-base cutoff current Forward current transfer ratio Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time IEBO hFE ICEO VBE ICES VCE = 4 V, IC = 3 A VCE = 60 V, VBE = 0 VCE = 80 V, VBE = 0 VCE = 30 V, IB = 0 VCE = 60 V, IB = 0 VEB = 5 V, IC = 0 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 3 A VCE(sat) IC = 4 A, IB = 0.4 A fT ton tstg tf VCE = 5 V, IC = 0.5 A, f = 1 MHz IC=4A IB1=-IB2=0.4 A VCC=50V Symbol VCEO Testconditons IC = 30 mA, IB = 0 Transistors Min 60 80 Typ Max Unit V V 2 400 400 700 700 1 40 15 1.5 20 0.4 1.2 0.5 250 V ìA ìA ìA ìA mA V MHz ìs ìs ìs hFE Classification Rank hFE R 40 90 Q 70 150 P 120 250 2 www.kexin.com.cn