2SD1257

S MD Type Silicon NPN Epitaxial Planar Type 2SD1257,2SD1257A TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector-emitter saturation voltage VCE(sat). Satisfactory linearity of forward current transfer ratio hFE. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 Large collector current IC. 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage 2SD1257 2SD1257A Collector-emitter voltage 2SD1257 2SD1257A Emitter-base voltage Collector current Peak collector current Collector power dissipation Ta = 25 VEBO IC ICP PC Tj Tstg VCEO Symbol VCBO Rating 130 150 80 100 7 7 15 1.3 40 Junction temperature Storage temperature 150 -55 to +150 Unit V V V V V A A W W 3 .8 0 www.kexin.com.cn 1 SMD Type 2SD1257,2SD1257A Electrical Characteristics Ta = 25 Parameter Collector-emitter voltage 2SD1257 2SD1257A Collector-base cutoff current Emitter-base cutoff current Forward current transfer ratio Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time ICBO IEBO hFE VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 3 A VCE = 2 V, IC = 0.1A VCE(sat) IC = 5 A, IB = 0.25 A VBE(sat) IC = 5 A, IB = 0.25 A fT ton tstg tf VCE = 10 V, IC = 0.5 A, f = 10 MHz IC=3A IB1=-IB2=0.3 A VCC=50V Symbol VCEO Testconditons IC = 10 mA, IB = 0 Transistors Min 80 100 Typ Max Unit V V 10 50 90 45 0.5 1.5 30 0.5 1.5 0.1 260 ìA ìA V V MHz ìs ìs ìs hFE Classification Rank hFE Q 90 180 P 130 260 2 www.kexin.com.cn