2SD1280

S MD Type Silicon NPN Epitaxial Planar Type 2SD1280 Transistors Features Low collector-emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 20 20 5 1 2 1 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-emitter voltage Emitter-base voltage Collector-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol VCEO VEBO ICBO hFE Testconditons IC = 1 mA, IB = 0 IE = 10 ìA, IC = 0 VCB = 10 V, IB = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1.5 A VCE(sat) IC = 1 A, IB = 50 mA VBE(sat) IC = 500 mA, IB = 50 mA fT Cob VCB = 6 V, IE = -50 mA, f = 200 MHz VCB = 6 V, IE = 0, f = 1 MHz 150 18 90 50 0.5 1.2 V V MHz pF Min 20 5 1 280 Typ Max Unit V V ìA hFE Classification Marking Rank hFE Q 90 155 R R 130 210 S 180 280 www.kexin.com.cn 1