2SD1419

S MD Type NPN Silicon epitaxial Transistor 2SD1419 Transistors Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature *1 PW 10ms, duty cycle 20% Symbol VCBO VCEO VEBO IC iC(peak)*1 PC*2 Tj Tstg Rating 120 100 5 1 2 1 150 -55 to 150 Unit V V V A A W *2 Value on the alumina ceramic board (12.5 X 20 X 0.7 mm) www.kexin.com.cn 1 SMD Type 2SD1419 Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance *Pulse test Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE VCE(sat) VBE fT Cob Testconditons IC = 10 ìA, IE = 0 IC = 1 mA, RBE = IE= 10 ìA, IC = 0 VCB = 100 V, IE = 0 VCE = 5 V, IC = 150 mA* VCE = 5 V, IC = 500 mA* IC = 500 mA, IB = 50 mA* VCE = 5 V, IC = 150 mA* VCE = 5 V, IC = 150 mA* VCB = 10 V, IE = 0, f = 1 MHz 60 30 Transistors Min 120 100 5 Typ Max Unit V V V 10 200 ìA 1 1.5 140 12 V V MHz pF hFE Classification Marking hFE DD 60 120 DE 100 200 2 www.kexin.com.cn