2SD1421

S MD Type Silicon NPN Epitaxial 2SD1421 Transistors Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature *1 PW 10ms, duty cycle 20% Symbol VCBO VCEO VEBO IC iC(peak)*1 PC*2 Tj Tstg Rating 180 160 5 1.5 3 1 150 -55 to 150 Unit V V V A A W *2 Value on the alumina ceramic board (12.5 X 20 X 0.7 mm) Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE VCE(sat) VBE Testconditons IC = 1 mA, IE = 0 IC = 10mA, RBE = IE= 1mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 0.15A VCE = 5 V, IC = 0.5A IC = 0.5A, IB = 50 mA,pulse VCE = 5 V, IC = 0.15mA,pulse 60 30 1.0 0.9 V V Min 180 160 5 10 200 Typ Max Unit V V V ìA hFE Classification Marking hFE ED 60 120 EE 100 200 www.kexin.com.cn 1