2SD1484K

SMD S MD Type Medium Power Transistor 2SD1484K SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 High current.(IC=5A). 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current * Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 50 5 0.5 0.2 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=100ìA IC=1mA IE=100ìA VCB=30V VEB=4V Testconditons Min 50 50 5 0.5 0.5 0.4 120 250 6.5 390 MHz pF Typ Max Unit V V V ìA ìA V VCE(sat) IC/IB=150mA/15mA hFE fT Cob VCE=3V, IC=0.01A VCE=5V, IE= -20mA, f=100MHz VCB=10V, IE=0A, f=1MHz hFE Classification Marking hFE YQ 120 270 YR 180 390 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1