2SD1583-Z

S MD Type NPN Silicon Epitaxial Transistor 2SD1583-Z TO-252 +0.15 1.50 -0.15 Transistors Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features Low VCE(sat). High hFE. +0.2 9.70 -0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector Current (pulse) *1 Total power dissipation Ta = 25 Junction temperature Storage temperature * 1 Pulse Test PW 10ms, Duty Cycle 50%. *2 Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 30 20 5 2 3 2 150 -55 to +150 Unit V V V A A W *2 When mounted on ceramic substrate of 7.5cm2 X0.7mm 3 .8 0 www.kexin.com.cn 1 SMD Type 2SD1583-Z Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current Symbol ICBO IEBO Testconditons VCB = 20 V, IE = 0 VEB = 5 V, IC = 0 VCE = 5 V, IC = 0.5 A DC current gain * hFE VCE = 5 V, IC =50mA VCE = 5 V, IC = 2 A Collector saturation voltage * Base saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Fall time * Pulsed: PW 350 ìs, duty cycle 2% VCE(sat) IC = 1.0 A, IB = 10 mA VBE(sat) IC = 1.0 A, IB = 10 mA fT Cob ton tstg tf VCE = 5 V, IE = 100 mA VCB = 10 V, IE = 0, f = 1.0 MHz IC = 1 A,VCC = 10 V IB1=-IB2=10 mA Transistors Min Typ Max 10 10 Unit ìA ìA 800 600 500 2000 2000 1400 0.18 0.85 270 20 0.6 1.5 0.3 3200 0.5 1.2 V V MHz pF ìs ìs ìs hFE Classification Marking hFE M 800 1600 L 1000 2000 K 1600 3200 2 www.kexin.com.cn