2SD1614

S MD Type NPN Silicon Epitaxial Transistor 2SD1614 Transistors Features World standard miniature package. High dc current gain. Low VCE(sat). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector Current (pulse) * Total power dissipation Junction temperature Storage temperature * Pulse Test PW 10ms, Duty Cycle Symbol VCBO VCEO VEBO IC IC PT Tj Tstg 50%. Rating 40 20 6 2 3 2.0 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage * Base saturation voltage * Base-emitter voltage * Gain bandwidth product Output capacitance * Pulsed: PW 350 ìs, duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = 30 V, IE = 0 A VEB = 6.0 V, IC = 0 A VCE = 2.0 V, IC = 100 mA 135 350 0.3 0.95 650 680 200 28 Min Typ Max 100 100 600 0.5 1.2 750 V V mV MHz pF Unit nA nA VCE(sat) IC = 2 A, IB = 50 mA VBE(sat) IC = 2 A, IB = 50 mA VBE fT Cob VCE = 6.0 V, IC = 100 mA VCE = 10 V, IE = -50 mA VCB = 10 V, IE = 0, f = 1.0 MHz hFE Classification Marking hFE XM 135 270 XL 200 400 XK 300 600 www.kexin.com.cn 1